Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
نویسندگان
چکیده
منابع مشابه
Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures
Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep...
متن کاملEnhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells.
The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k·p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlN QWs. A...
متن کاملSurface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nm is observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emi...
متن کاملDistinct U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes.
The efficiency of an AlGaN deep-ultraviolet light-emitting diode with peak emission wavelength of 285 nm is investigated as a function of current over a wide range of temperatures (110 K to 300 K). We find that the efficiency-versus-current curve exhibits unique and distinct features over the entire temperature range including three points of inflection. At low temperatures, the change in slope...
متن کاملStatus of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues ...
متن کامل